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| 2N/SST5460 Series Vishay Siliconix P-Channel JFETs 2N5460 2N5461 2N5462 PRODUCT SUMMARY Part Number 2N/SST5460 2N/SST5461 2N/SST5462 SST5460 SST5461 SST5462 VGS(off) (V) 0.75 to 6 1 to 7.5 1.8 to 9 V(BR)GSS Min (V) 40 40 40 gfs Min (mS) 1 1.5 2 IDSS Min (mA) -1 -2 -4 FEATURES D D D D High Input Impedance Very Low Noise High Gain: AV = 80 @ 20 mA Low Capacitance: 1.2 pF Typical BENEFITS D Low Signal Loss/System Error D High System Sensitivity D High-Quality Low-Level Signal Amplification APPLICATIONS D Low-Current, Low-Voltage Amplifiers D High-Side Switching D Ultrahigh Input Impedance Pre-Amplifiers DESCRIPTION The 2N/SST5460 series are p-channel JFETs designed to provide all-around performance in a wide range of amplifier and analog switch applications. The 2N series, TO-226AA (TO-92), and SST series, TO-236 (SOT-23), plastic packages provide low cost options, and are available in tape-and-reel for automated assembly, (see Packaging Information). TO-226AA (TO-92) 1 2N5460 2N5461 2N5462 D 1 TO-236 (SOT-23) SST5460 (B0)* SST5461 (B1)* SST5462 (B2)* *Marking Code for TO-236 S D 2 3 S 2 G G 3 Top View Top View ABSOLUTE MAXIMUM RATINGS Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 V Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -10 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW Notes a. Derate 2.8 mW/_C above 25_C Document Number: 70262 S-04030--Rev. D, 04-Jun-01 www.vishay.com 9-1 2N/SST5460 Series Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits 2N/SST5460 2N/SST5461 2N/SST5462 Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Current Drain Cutoff Current Symbol Test Conditions Typa Min Max Min Max Min Max Unit V(BR)GSS VGS(off) IDSS IGSS IG ID(off) IG = 10 mA , VDS = 0 V VDS = -15 V, ID = -1 mA VDS = -15 V, VGS = 0 V VGS = 20 V, VDS = 0 V TA = 100_C VDG = -20 V, ID = -0.1 mA VDS = -15 V, VGS = 10 V ID = -0.1 mA 55 40 0.75 -1 6 -5 5 1 40 1 -2 7.5 -9 5 1 40 V 1.8 -4 9 -16 5 1 mA nA mA pA 0.003 0.0003 3 -5 1.3 2.3 3.8 -0.7 0.5 4 0.8 4.5 1.5 6 V Gate-Source Voltage VGS VDS = -15 V ID = -0.2 mA ID = -0.4 mA Gate-Source Forward Voltage VGS(F) IG = -1 mA , VDS = 0 V Dynamic Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Reverse Transfer Capacitance Common-Source Reverse Transfer Capacitance Common-Source Output Capacitance Equivalent Input Noise Voltage gfs gos VDS = -15 V, VGS = 0 V f = 1 kHz 1 4 75 2N Ciss VDS = -15 V, VGS = 0 V f = 1 MHz 2N Coss VDS = -15 V, VGS = 0 V f = 100 Hz VDS = -15 V, VGS = 0 V f = 100 Hz, RG = 1 MW W BW = 1 Hz SST 2N SST 2N SST SST 4.5 4.5 1.2 1.5 1.5 15 15 0.2 0.2 PSCIB 2.5 2.5 2.5 dB 115 115 115 nV Hz 2 2 2 pF 7 1.5 5 75 7 2 6 75 7 mS mS Crss en Noise Figure NF Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v2%. www.vishay.com 9-2 Document Number: 70262 S-04030--Rev. D, 04-Jun-01 2N/SST5460 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage -20 5 rDS(on) - Drain-Source On-Resistance ( ) gfs - Forward Transconductance (mS) 1000 On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage 100 IDSS - Saturation Drain Current (mA) g os- Output Conductance ( mS) -16 gfs -12 IDSS -8 800 80 600 rDS 400 gos 60 2.5 40 -4 gfs @ VDS = -15 V, VGS = 0 V IDSS @ VDS = -15 V, VGS = 0 V f = 1 kHz 0 0 2 4 6 8 10 VGS(off) - Gate-Source Cutoff Voltage (V) 200 rDS @ ID = -100 mA, VGS = 0 V gos @ VDS = -15 V, VGS = 0 V f = 1 kHz 0 2 4 6 8 10 20 0 0 VGS(off) - Gate-Source Cutoff Voltage (V) 0 Output Characteristics -2 VGS(off) = 1.5 V -10 VGS = 0 V 0.2 V I D - Drain Current (mA) -8 Output Characteristics VGS(off) = 3 V -1.6 I D - Drain Current (mA) -1.2 0.4 V -6 VGS = 0 V 0.5 V 1.0 V -0.8 0.6 V 0.8 V -4 -0.4 1.0 V -2 1.5 V 2.0 V 0 0 -4 -8 -12 -16 -20 VDS - Drain-Source Voltage (V) 0 0 -4 -8 -12 -16 -20 VDS - Drain-Source Voltage (V) Output Characteristics -0.5 VGS(off) = 1.5 V -0.4 I D - Drain Current (mA) VGS = 0 V 0.2 V 0.4 V 0.6 V I D - Drain Current (mA) -1.6 -2 Output Characteristics VGS(off) = 3 V 0.5 V 1.0 V -1.2 1.5 V -0.8 2.0 V -0.4 1.2 V 2.5 V 0 0 -0.2 -0.4 -0.6 -0.8 -1 VGS = 0 V 0.8 V -0.3 -0.2 1.0 V -0.1 0 0 -0.2 -0.4 -0.6 -0.8 -1 VDS - Drain-Source Voltage (V) VDS - Drain-Source Voltage (V) Document Number: 70262 S-04030--Rev. D, 04-Jun-01 www.vishay.com 9-3 2N/SST5460 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Transfer Characteristics -5 VGS(off) = 1.5 V -4 I D - Drain Current (mA) I D - Drain Current (mA) VDS = -15 V -8 -10 VGS(off) = 3 V VDS = -15 V Transfer Characteristics -3 -6 TA = -55_C -2 TA = -55_C 25_C -4 25_C -1 125_C 0 0 0.4 0.8 1.2 1.6 2 VGS - Gate-Source Voltage (V) -2 125_C 0 0 1 2 3 4 5 VGS - Gate-Source Voltage (V) On-Resistance vs. Drain Current 1000 rDS(on) - Drain-Source On-Resistance ( ) TA = 25_C 800 I G - Gate Leakage 1 nA 10 nA Gate Leakage Current -5 mA TA = 125_C 600 VGS(off) = 1.5 V 100 pA IGSS @ 125_C -1 mA 3V 400 4V 200 10 p A TA = 25_C 1 pA -5 mA -0.1 mA IGSS @ 25_C 0 -0.1 0.1 pA -1 ID - Drain Current (mA) -10 0 -10 -20 -30 -40 -50 VDG - Drain-Gate Voltage (V) Transconductance vs. Gate-Source Voltage 5 VGS(off) = 1.5 V gfs - Forward Transconductance (mS) 4 VDS = -15 V f = 1 kHz 5 Transconductance vs. Gate-Source Voltage VGS(off) = 3 V gfs - Forward Transconductance (mS) 4 TA = -55_C 3 25_C VDS = -15 V f = 1 kHz 3 TA = -55_C 2 25_C 2 125_C 1 1 125_C 0 0 0.4 0.8 1.2 1.6 2 VGS - Gate-Source Voltage (V) 0 0 1 2 3 4 5 VGS - Gate-Source Voltage (V) www.vishay.com 9-4 Document Number: 70262 S-04030--Rev. D, 04-Jun-01 2N/SST5460 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Circuit Voltage Gain vs. Drain Current 100 VGS(off) = 1.5 V 10 VGS(off) = 3 V 80 A V - Voltage Gain gfs - Forward Transconductance (S) Common-Source Forward Transconductance vs. Drain Current TA = -55_C 1 125_C 60 VGS(off) = 3 V 25_C 40 20 0 Assume VDD = -15 V, VDS = -5 V g fs R L 10 V AV + RL + ID 1 ) R Lg os -0.01 -0.1 ID - Drain Current (mA) -1 VDS = -15 V f = 1 kHz 0.1 -0.1 -1 ID - Drain Current (mA) -10 Common-Source Input Capacitance vs. Gate-Source Voltage 10 C rss - Reverse Feedback Capacitance (pF) f = 1 MHz C iss - Input Capacitance (pF) 8 Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage 5 f = 1 MHz 6 2.5 4 -5 V 2 -5 V -15 V 0 -15 V 0 0 4 8 12 16 20 VGS - Gate-Source Voltage (V) 0 4 8 12 16 20 VGS - Gate-Source Voltage (V) Equivalent Input Noise Voltage vs. Frequency 100 VDS = -15 V gos - Output Conductance (S) 16 20 Output Conductance vs. Drain Current VGS(off) = 3 V Hz TA = -55_C 12 25_C 8 125_C 4 VDS = -15 V f = 1 kHz en - Noise Voltage nV / ID = -0.1 mA 10 ID = -1 mA 1 10 100 1k f - Frequency (Hz) 10 k 100 k 0 -0.1 -1 ID - Drain Current (mA) -10 Document Number: 70262 S-04030--Rev. D, 04-Jun-01 www.vishay.com 9-5 |
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